1. <mark id="ab76h"></mark>

      1. 登錄|注冊收藏本站在線留言聯系中銘網站地圖 English

        您好,歡迎訪問中銘電子官方網站!

        中銘電子 中銘電子

        咨詢電話:

        400-788-7770
        18923224605

        熱門關鍵詞: 氣壓傳感器 壓力傳感器品牌 led恒流驅動芯片 IGBT MOS管 led驅動 智能IGBT 華南華東IGBT IGBTIGBT 深圳IGBT

        中銘電子解決方案
        N通道高級功率mosfet--RU207C
        N通道高級功率mosfet--RU207C
        * 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...
        N通道超級溝槽ii功率mosfet--NCEP058N85D
        N通道超級溝槽ii功率mosfet--NCEP058N85D
        The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...
        增強型功率mosN溝道--NCE4080K
        增強型功率mosN溝道--NCE4080K
        The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
        N溝道增強型功率mosfet--NCE3010S
        N溝道增強型功率mosfet--NCE3010S
        The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
        龍騰12A,N渠道650V超級MOS管--LND12N65
        龍騰12A,N渠道650V超級MOS管--LND12N65
        Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
        龍騰10A,N渠道650V超級MOS管--LND10N65
        龍騰10A,N渠道650V超級MOS管--LND10N65
        Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...
        龍騰N渠道650V,4A超級MOS管--LND4N65
        龍騰N渠道650V,4A超級MOS管--LND4N65
        The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
        龍騰N渠道650V,16A超級MOS管--LND16N65
        龍騰N渠道650V,16A超級MOS管--LND16N65
        Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
        龍騰N渠道650V,7A超級MOS管--LND7N65D
        龍騰N渠道650V,7A超級MOS管--LND7N65D
        The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...
        龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
        龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
        Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...
        MOS管--NCE3407A
        MOS管--NCE3407A
        Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...
        新潔能MOS管--NCE3407
        新潔能MOS管--NCE3407
        MOS管--3407 封裝是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).
        10A、650V N溝道增強型場效應管--SVF10N65T/F/K/S
        10A、650V N溝道增強型場效應管--SVF10N65T/F/K/S
        SVF10N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
        7A、650V N溝道增強型場效應管--SVF7N65T/F/K/S
        7A、650V N溝道增強型場效應管--SVF7N65T/F/K/S
        SVF4N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
        5A、600V N溝道增強型場效應管--SVF5N60T/F/D/MJ/K
        5A、600V N溝道增強型場效應管--SVF5N60T/F/D/MJ/K
        SVF5N60T/F/D/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
        4A、650V N溝道增強型場效應管--SVF4N65T/F/M/MJ/D/K
        4A、650V N溝道增強型場效應管--SVF4N65T/F/M/MJ/D/K
        SVF4N65T/F/M/MJ/D/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
        3A、800V N溝道增強型場效應管--SVF3N80M/MJ/F/D
        3A、800V N溝道增強型場效應管--SVF3N80M/MJ/F/D
        SVF3N80M/MJ/F/D N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。
        12A、650V N溝道增強型場效應管--SVF12N65T/F/K/S
        12A、650V N溝道增強型場效應管--SVF12N65T/F/K/S
        SVF12N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。
        7A、800V N溝道增強型場效應管--SVF7N80T/F
        7A、800V N溝道增強型場效應管--SVF7N80T/F
        SVF7N80T/F N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。
        2A、600V N溝道增強型場效應管--SVF2N60M/MJ/N/F/T/D
        2A、600V N溝道增強型場效應管--SVF2N60M/MJ/N/F/T/D
        SVF2N60M/MJ/N/F/T/D N溝道增強型高壓功率 MOS 場效應晶體管采用士蘭微電子的 F-CellTM平面高壓VDMOS 工藝技術制造。
        記錄總數:43 | 頁數:3123  
        聯系中銘
        全國咨詢熱線:400-788-7770

        銷售電話:0769-81150556
        工程電話:0769-85638990

        傳真:0769-83351643

        郵箱:dgzm699@163.com

        地址:東莞市矮嶺冚村沿河東街8號

        亚投彩神