N通道高級功率mosfet--RU207C

* 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free...

N通道超級溝槽ii功率mosfet--NCEP058N85D

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both c...

增強型功率mosN溝道--NCE4080K

The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

N溝道增強型功率mosfet--NCE3010S

The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...

龍騰12A,N渠道650V超級MOS管--LND12N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龍騰10A,N渠道650V超級MOS管--LND10N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology.The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,4A超級MOS管--LND4N65

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,16A超級MOS管--LND16N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

龍騰N渠道650V,7A超級MOS管--LND7N65D

The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performanc...

龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65

Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performan...

MOS管--NCE3407A

Description The NCE3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applicat...

新潔能MOS管--NCE3407

MOS管--3407 封裝是SOT-23.THE NCE3407 USES ADVANCED TRENCH TECHNOLOGU TO JROVIDE EXCELLONT RDS(ON).

10A、650V N溝道增強型場效應管--SVF10N65T/F/K/S

SVF10N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。

7A、650V N溝道增強型場效應管--SVF7N65T/F/K/S

SVF4N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。

5A、600V N溝道增強型場效應管--SVF5N60T/F/D/MJ/K

SVF5N60T/F/D/MJ/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。

4A、650V N溝道增強型場效應管--SVF4N65T/F/M/MJ/D/K

SVF4N65T/F/M/MJ/D/K N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。

3A、800V N溝道增強型場效應管--SVF3N80M/MJ/F/D

SVF3N80M/MJ/F/D N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。

12A、650V N溝道增強型場效應管--SVF12N65T/F/K/S

SVF12N65T/F/K/S N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。

7A、800V N溝道增強型場效應管--SVF7N80T/F

SVF7N80T/F N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術制造。

2A、600V N溝道增強型場效應管--SVF2N60M/MJ/N/F/T/D

SVF2N60M/MJ/N/F/T/D N溝道增強型高壓功率 MOS 場效應晶體管采用士蘭微電子的 F-CellTM平面高壓VDMOS 工藝技術制造。