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        中銘功率器件
        MOS管 NCE65R540
        MOS管 NCE65R540
        The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits ...
        MOS管 NCE01P13
        MOS管 NCE01P13
        The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications...
        POWER MOSFET--10N60K
        POWER MOSFET--10N60K
        The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching perf...
        POWER MOSFET--8N60
        POWER MOSFET--8N60
        The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low o...
        POWER MOSFET--5N60
        POWER MOSFET--5N60
        The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resi...
        POWER MOSFET-- 4N60-C
        POWER MOSFET-- 4N60-C
        The UTC 4N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state re...
        POWER MOSFET--2N70
        POWER MOSFET--2N70
        The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and hi...
        POWER MOSFET--2N60
        POWER MOSFET--2N60
        The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state res...
        POWER MOSFET--1N60
        POWER MOSFET--1N60
        The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance...
        IGBT晶體管--SGT20T120NPTFDP7
        IGBT晶體管--SGT20T120NPTFDP7
        SGT20N120NPTFDP7絕緣柵雙極型晶體管采用新一代槽柵場截止(Trench Field Stop)工藝制作,具有低的導通損耗和開關損耗,正溫度系數易于并聯應用等特點。該亚投彩神可應用于感應加熱UPS,SMPS以及PFC等領域。
        電磁爐上IGBT--SGT15T120LR1P7
        電磁爐上IGBT--SGT15T120LR1P7
        SGT15T120LR1P7絕緣柵雙極型晶體管采用新一代槽柵場截止(Trench Field Stop)工藝制作,具有低的導通損耗和開關損耗,正溫度系數易于并聯應用等特點。該亚投彩神可應用于感應加熱UPS,SMPS以及PFC等領域。
        MOSFET場效應晶體管-SVF12N60
        MOSFET場效應晶體管-SVF12N60
        SVF12N60T/F/SN溝道增強型功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,H橋PWM馬達驅動。
        MOSFET場效應晶體管-SVF10N60
        MOSFET場效應晶體管-SVF10N60
        SVF10N60T/F/FG/S/KN溝道增強型功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,H橋PWM馬達驅動。
        MOSFET場效應晶體管-SVF8N60
        MOSFET場效應晶體管-SVF8N60
        SVF8N60T/FN溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,高壓H橋PWM 馬達驅動。
        MOSFET場效應晶體管-SVF7N60
        MOSFET場效應晶體管-SVF7N60
        SVF7N60T/F/S/K/MJ N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,H橋PWM馬達驅動。
        MOSFET場效應晶體管-SVF4N60
        MOSFET場效應晶體管-SVF4N60
        SVF4N60D/F/FG/T/K/M/MJN溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,高壓H橋PWM...
        MOSFET場效應晶體管-SVF2N60
        MOSFET場效應晶體管-SVF2N60
        SVF2N60M/MJ/N/F/T/DN 溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及很高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,高壓H橋PWM馬達...
        MOSFET場效應晶體管-SVF1N60
        MOSFET場效應晶體管-SVF1N60
        SVF1N60AM/MJ/B/D/F/HN 溝道增強型高壓功率MO場效應晶體管采用士蘭微電子的F-CellTM平面高壓VDMOS工藝技術制造。工藝及條狀的原胞設計結構使得該亚投彩神具有較低的導通電阻、優越的開關性能及高的雪崩擊穿耐量。該亚投彩神可廣泛應用于AC-DC開關電源,DC-DC電源轉換器,高壓 H橋PWM馬達...
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