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        N溝道增強型功率mosfet--NCE3010S

        亚投彩神分類: mos管
          The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
          訂購熱線:400-788-7770
          增強型功率mosN溝道--NCE4080K
          增強型功率mosN溝道--NCE4080K
          The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
          N通道超級溝槽ii功率mosfet--NCEP058N85D
          N通道超級溝槽ii功率mosfet--NCEP058N85D
          The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
          N通道高級功率mosfet--RU207C
          N通道高級功率mosfet--RU207C
          * 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant)

                         N溝道增強型功率mosfet--NCE3010S

            一 概述

            The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 

             

            二 特性

            VDS=30V,ID=10A
              RDS(ON)<12mΩ @VGS=10V
              RDS(ON)<16mΩ @VGS=4.5V
            High density cell design for ultra low Rdson
            Fully characterized Avalanche voltage and current
             

            三 應用

            Power switching application
            Hard Switched and High Frequency Circuits
            Uninterruptible Power Supply
             

            四 封裝

             

            五 應用電路圖

             

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            * 表示必填采購:N溝道增強型功率mosfet--NCE3010S
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            驗證碼: 驗證碼
            增強型功率mosN溝道--NCE4080K
            增強型功率mosN溝道--NCE4080K
            The NCE4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
            N通道超級溝槽ii功率mosfet--NCEP058N85D
            N通道超級溝槽ii功率mosfet--NCEP058N85D
            The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
            N通道高級功率mosfet--RU207C
            N通道高級功率mosfet--RU207C
            * 20V/6A, RDS (ON) =10mΩ(Typ.)@VGS=4.5V RDS (ON) =15mΩ(Typ.)@VGS=2.5V * Low RDS (ON) * Super High Dense Cell Design * Reliable and Rugged * Lead Free and Green Devices Available (RoHS Compliant)
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