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        龍騰12A,N渠道650V超級MOS管--LND12N65

        亚投彩神分類: mos管
          Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
          訂購熱線:400-788-7770
          龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
          龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
          Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
          龍騰N渠道650V,7A超級MOS管--LND7N65D
          龍騰N渠道650V,7A超級MOS管--LND7N65D
          The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
          龍騰N渠道650V,16A超級MOS管--LND16N65
          龍騰N渠道650V,16A超級MOS管--LND16N65
          Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

               龍騰12A,N渠道650V超級MOS管--LND12N65,LNC12N65,LNE12N65,LNF12N65

             

            一 概述

            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

             

            二 特性

            *Low RDS(on)
            *Low gate charge(typ.Qg=34.2nC)
            *100% UIS tested
            *RoHS compliant

             

            三 應用

            *Power factor correction.
            *Switched mode power supplies.
            *LED driver.

             

            四 封裝

             

              全國咨詢熱線:400-788-7770

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              郵箱:dgzm699@163.com  QQ:1923681612   傳真:0769-83351643

             

              總部地址:東莞市大嶺山鎮矮嶺冚村沿河東街8號

              佛山辦事處:佛山市順德區容桂鎮細滘德寶北路合安街19號

             

              中銘官網:www.apositivejourney.com      

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            驗證碼: 驗證碼
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
            龍騰N渠道650V,16A超級MOS管--LND16N65
            龍騰N渠道650V,16A超級MOS管--LND16N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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            全國咨詢熱線:400-788-7770

            銷售電話:0769-81150556
            工程電話:0769-85638990

            傳真:0769-83351643

            郵箱:dgzm699@163.com

            地址:東莞市矮嶺冚村沿河東街8號

            亚投彩神