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        高電壓,高功率驅動MOSFET--PN7104

        亚投彩神分類: 電機驅動芯片
          The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
          訂購熱線:400-788-7770
          高、低驅動程序高功率MOSFET--PN7113
          高、低驅動程序高功率MOSFET--PN7113
          The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
          網格狀高功率MOSFET--PN7303
          網格狀高功率MOSFET--PN7303
          The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
          網格狀高壓力高功率MOSFET--PN7308
          網格狀高壓力高功率MOSFET--PN7308
          The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.

                      高電壓,高功率驅動MOSFET--PN7104

            一 概述

            The PN7104 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. Propagation delays are matched to simplify use in high frequency applications.

             

            二 特性

            * Fully operational to +600V

            * 3.3V logic compatible

            * dV/dt Immunity ±50V/nsec

            * Floating channel designed for bootstrap operation

            * Gate drive supply range from 10V to 20V

            * UVLO for low side channels

            * Output Source/Sink Current Capability 400mA/650mA

            * Cross Conduction Protection with 520ns Internal Fixed Dead Time

            * -10V negative Vs ability

            * Matched propagation delay for both channels

             

            三 應用 

            * Small and medium- power motor driver

            * Power MOSFET or IGBT driver

             

            四 封裝

             

            五 典型應用

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            高、低驅動程序高功率MOSFET--PN7113
            高、低驅動程序高功率MOSFET--PN7113
            The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
            網格狀高功率MOSFET--PN7303
            網格狀高功率MOSFET--PN7303
            The PN7303 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT in a half-bridge configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
            網格狀高壓力高功率MOSFET--PN7308
            網格狀高壓力高功率MOSFET--PN7308
            The PN7308 is a high voltage, high speed power MOSFET and IGBT driver based on P_SUB P_EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 600 V.Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
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            銷售電話:0769-81150556
            工程電話:0769-85638990

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            郵箱:dgzm699@163.com

            地址:東莞市矮嶺冚村沿河東街8號

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