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        POWER MOSFET--10N60K

        亚投彩神分類: mos管
          The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.
          訂購熱線:400-788-7770
          龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
          龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
          Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
          龍騰N渠道650V,7A超級MOS管--LND7N65D
          龍騰N渠道650V,7A超級MOS管--LND7N65D
          The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
          龍騰N渠道650V,16A超級MOS管--LND16N65
          龍騰N渠道650V,16A超級MOS管--LND16N65
          Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

             

            POWER MOSFET

             

            MODEL: 10N60K

             

             

            一、DESCRIPTION

             

            The UTC 10N60K is an N-channel Power MOSFET using UTC`s advanced technology to provide  customers a minimum on-state resistance and superior switching performance, etc.

            The UTC 10N60K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.

             

            二、FEATURES

             

            * RDS(ON) < 1.2 @ VGS =10V

            * Low Gate Charge (Typical 90nC)

            * Low CRSS ( typical 18 pF)

            * High Switching Speed

            * Improved dv/dt capability

             

            三、SYMBOL/PACKAGE

             

            UTC MOS管 10N60K封裝圖 

             

            四、ORDERING INFORMATION

             

             UTC MOS管 10N60K訂購信息

             

            五、MARKING

             

             UTC MOS管 10N60K命名規則

             

            六、ABSOLUTE MAXIMUM RATINGS

             

             UTC MOS管 10N60K極限參數

              

             

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            驗證碼: 驗證碼
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            龍騰N渠道650V,20A超級MOS管--LND20N65/LNB20N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            龍騰N渠道650V,7A超級MOS管--LND7N65D
            The Power MOSFET is fabricated using the advanced planar VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalance energy.
            龍騰N渠道650V,16A超級MOS管--LND16N65
            龍騰N渠道650V,16A超級MOS管--LND16N65
            Power MOSFET is fabricated using the VDSS advanced planer VDMOS technology. The resulting device has low conduction resistance,superior switching performance and high avalanche energy.

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            銷售電話:0769-81150556
            工程電話:0769-85638990

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            郵箱:dgzm699@163.com

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            亚投彩神